| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 20mA |
| 截止频率fTTranstion Frequency(fT) | 10Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure,High Gain |
| 描述与应用 | NPN外延刨床硅的晶体管 甚高频-超高频波段低噪声放大器的应用 低噪声系数，高增益 |