| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 300V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 70MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 1V |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | NPN triple diffused planar Silicon transistor TV Camera Deflection,High-Voltage Driver Applications High breakdown voltage Small reverse transfer capacitance and excellent high frequency characteristic Excellent DC current gain ratio Adoption of FBET process |
| 描述与应用 | NPN三重扩散平面硅晶体管 电视摄像机偏转，高电压驱动器应用 高击穿电压 小反向传输电容和优异的高频率特性 优秀DC电流增益比 采纳FBET过程 |