| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 130MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 150mV/0.15V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | PNP/NPN Epitaxial planar Silicon transistor Low-Frequency General-Purpose Amp Applications Very small-siezed package permitting the 2SA1687/2SC4446-applied sets to be made small and slim |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 低频 通用放大器应用 非常小的封装允许2SA1687/2SC4446的应用设置制得微小和轻薄 |