| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
400V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
400V |
| 集电极连续输出电流ICCollector Current(IC) |
100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) |
20MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
120~270 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
50mV |
| 耗散功率PcPower Dissipation |
500mW/0.5W |
| Description & Applications |
Power Transistor (400V, 0.1A) High breakdown voltage. (BVCEO = 400V) Low saturation voltage High switching speed, typically tf = 1.7µs at Ic =100mA. Complements the 2SC4505 and the 2SA1759 |
| 描述与应用 |
功率晶体管（400V，0.1A） 高击穿电压（BVCEO =400V） 低饱和电压 高开关速度 与2SC4505和2SA1759互补 |