| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
45V |
| 集电极连续输出电流ICCollector Current(IC) |
500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) |
350MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
150mV/0.15V |
| 耗散功率PcPower Dissipation |
200mW/0.2W |
| Description & Applications |
NPN epitaxial planer Silicon transistor Highspeed Switching Applications Adoption of FBET,MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Small-sized package |
| 描述与应用 |
NPN硅外延晶体管 高速开关应用 采纳FBET，MBIT进程 集电极到发射极的饱和电压低 开关速度快 小型包装 |