| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流ICCollector Current(IC) | 1.5A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 250mV/0.25V |
| 耗散功率PcPower Dissipation | 1.3W |
| Description & Applications | NPN epitaxial planer Silicon transistor High-Speed Switching Applications Adoption of FBET,MBIT processes Large current capacity Low collector-to-emitter saturation voltage Fast switching speed Small-sized package |
| 描述与应用 | NPN硅外延晶体管 高速开关应用 采纳FBET，MBIT进程 大电流容量 集电极到发射极的饱和电压低 开关速度快 小型包装 |