| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 400V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 400V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 70HMz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 0.6V~1V |
| 耗散功率PcPower Dissipation | 1.3W |
| Description & Applications | PNP/NPN Epitaxial planar Silicon transistor High-Voltage Driver Applications High breakdown voltage adoption of MBIT process Excellent hFE linearrity |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 高电压驱动器应用 高击穿电压 采用MBIT过程 优秀的hFE线性 |