| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 19V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 1.1GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 56~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 150mW-200mW |
| Description & Applications | epitaxial planer NPN Silicon transistor RF Amplifier High transition frequency: fT-1.1GHz Low collector to base time constant and high gain Excellent noise response |
| 描述与应用 | 外延刨床NPN硅晶体管 射频放大器 高转换频率：FT-1.1GHz 集电极到基极的时间常数时间低以及高增益 出色的噪声响应 |