| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流ICCollector Current(IC) |
20mA |
| 截止频率fTTranstion Frequency(fT) |
500MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
56~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
100mV/0.1V |
| 耗散功率PcPower Dissipation |
150mW/0.15W |
| Description & Applications |
Features •Silicon PNP epitaxial planer type •High transition frequency fT=500MHz(Typ) •low output capacitance Cob=1.4pF(Typ) •Low base resistance for high gain and excellent noise response |
| 描述与应用 |
特点 •PNP硅外延平面型 •高转换频率fT=500MHz的（典型值） •低输出电容科夫=1.4pF（典型值） •低基极电阻的高增益和良好的噪声响应 |