| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 400MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~240 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <300mV/0.3V |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Features •TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) •High transition frequency :ft=400MHz •High speed switching Applications •High saturation Voltage: VCEO(sat)= 0.3V (max) •High speed switching time :tstg=15ns(Typ) |
| 描述与应用 | 特点 •东芝晶体管的硅NPN外延式（PCT程序） •高转换频率：FT =400MHz的高速开关应用 •高饱和电压VCEO（星期六）=0.3V（最大值） •高速开关时间：TSTG=为15ns（典型值） |