| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
40V |
| 集电极连续输出电流ICCollector Current(IC) |
100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) |
450MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
90~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
170mV/0.17V |
| 耗散功率PcPower Dissipation |
125mW/0.125W |
| Description & Applications |
Features •Silicon NPN epitaxial planar type •For high-speed switching •Low collector-emitter saturation voltage VCE(sat) •SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 |
特点 •NPN硅外延平面型 •对于高速切换 •低集电极 - 发射极饱和电压VCE（sat） •SS-迷你型包装，使瘦身的设备和 通过自动插入磁带包装 |