| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300~1200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 120mV/0.12V |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | Features • NPN epitaxial planer Silicon transistor • Low frequency general purpose Amp muting applications • adoption of FBET process • high DC current gain • high Vebo • high reverse hfe • small on resistance |
| 描述与应用 | 特点 •NPN外延刨床硅的晶体管 •低频通用放大器静音应用 •通过的FBET过程 •高直流电流增益 •高VEBO •高反向的HFE •小阻力 |