| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 1.5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 82~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <500mV/0.5V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Features •High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) •High transition frequency. (Typ. fT = 1.5GHz) •Small rbb’Cc and high gain. (Typ. 6ps) •Small NF. |
| 描述与应用 | 特点 •高频晶体管放大器（20V，50mA时1.5GHz的） •高转换频率（典型值英尺=1.5GHz的） •小RBBCC和高增益。 （6PS典型值） •小NF。 |