| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 65mA |
| 截止频率fTTranstion Frequency(fT) | 8.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Features •Silicon NPN epitaxial planar type •For 2GHz band low-noise amplification •High transition frequency fT. •S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 | 特点 •NPN硅外延平面型•2GHz频段低噪声放大 •高转换频率fT。 •S-迷你型包装，使瘦身的设备和通过自动插入带包装盒包装 |