| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 4.4Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 800mW/0.8W |
| Description & Applications | Features •Silicon NPN epitaxial planar type •High gain bandwidth product fT= 4.4 GHz Typ •High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE= 5V , IC = 100 mA , f = 900 MHz Application •VHF / UHF wide band amplifier |
| 描述与应用 | 特点 •NPN硅外延平面型 •高增益带宽乘积fT=4.4 GHz的典型 •高输出功率1 dB功率压缩点PCP =24 dBm（典型值）在VCE=5V，IC= 100 mA时，F =900兆赫 应用 •VHF / UHF宽频带放大器 |