| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 40mA |
| 截止频率fTTranstion Frequency(fT) | 7GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 30~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Features •Silicon NPN epitaxial planar type •Low noise figure High gain •NF=1.1db |S21e|*2=12db Amplication •VHL ~ UHF band low noise amplifier application |
| 描述与应用 | 特点 •NPN硅外延平面型 •低噪声系数高增益 •NF=1.1分贝| S21E| *2的=12分贝扩增 •VHL〜UHF频段低噪声放大器的应用 |