| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 750MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <250mV/0.25V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Features • NPN Epitaxial planar Silicon transistor • High speed switching applications • Fast switching speed • Low collector saturation voltage • High gain bandwidth product • small collector capacitance |
| 描述与应用 | 特点 •NPN外延平面硅晶体管 •高速开关应用 •开关速度快 •低集电极饱和电压 •高增益带宽积 •集电极小电容 |