| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 35mA |
| 截止频率fTTranstion Frequency(fT) | 10Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 6V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Features • SILICON TRANSISTOR • HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD • Small Package • High Gain Bandwidth Product (fT = 10 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation |
| 描述与应用 | 特点 •硅晶体管 •高频低噪声放大器NPN硅外延晶体管4针SUPER MINI MOLD •小包装 •高增益带宽积（FT =10 GHz的TYP。） •低噪声，高增益 •低电压操作 |