| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 8V |
| 集电极连续输出电流ICCollector Current(IC) | 15mA |
| 截止频率fTTranstion Frequency(fT) | 10Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~160 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Silicon NPN epitaxial planar type VHL ~ UHF band low noise amplifier application Features • High gain |S21e|*2=7.5db • Low noise figure NF=1.8db |
| 描述与应用 | NPN硅外延平面型 VHL〜UHF频段低噪声放大器的应用 特点 •高增益| S21E| *2= 7.5db，干扰 •低噪声系数NF=1.8分贝 |