| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 5V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 3V |
| 集电极连续输出电流ICCollector Current(IC) | 10mA |
| 截止频率fTTranstion Frequency(fT) | 13Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 70~140 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 30mW |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES FEATURES • Low current consumption and high gain |S21e|*2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|*2= 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • Ultra Super Mini-Mold package |
| 描述与应用 | NPN外延硅晶体管超超小型模具包装 低噪声微波放大 特点 特点 •低电流消耗和高增益 | S21E|* 2 =10.5 dBTYP。 @ VCE= 2 V，IC =7毫安，F =2吉赫 | S21E|* 2：=9.0 dBTYP。“@ VCE= 1 V，IC= 5毫安，F =2吉赫 •超超级迷你模具包装 |