| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 9V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 4.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~160 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB . @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB . @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Mini Mold Package |
| 描述与应用 | 微波低噪声放大器 NPN硅外延晶体管 特点 •低电压操作，低相位失真 •低噪声 NF=1.5分贝。 @ VCE= 3 V，IC =7毫安，F =2吉赫 NF=1.7分贝。 @ VCE= 1 V，IC =3毫安，F =2吉赫 •大绝对最大集电极电流 IC= 100 mA时 •迷你模具包装 |