| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 8V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 1.3GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~350 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <500mV/0.5V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Features *High transition frequency fT. *Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 | NPN硅外延平面型 对于高频放大/振荡/混合 特点 *高转换频率FT。 *迷你型包装，使瘦身的设备和 通过自动插入磁带包装和杂志 填料 |