| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 11GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 135~270 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN epitaxial planar type UHF to S-band low noise amp，OSC application ■ Features • High gain |S21e|*2=10db • Low noise NF=0.9db • high cutoff frequency fT=11GHZ • low voltage ，low current operation |
| 描述与应用 | NPN硅外延平面型 UHF到S波段低噪声放大器，OSC应用 ■特点 •高增益| S21E| *2= 10db，干扰 •低噪声NF=0.9分贝。 •高截止频率fT=11GHz的 •低电压，低电流操作 |