| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 150V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 150V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 56~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <500mV/0.5V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | high voltage amplifier transistor ■ Features • High breakdown voltage （BVceo=150V） • Low collector output capacitance,typically 2pF at Vcb=12V |
| 描述与应用 | 高电压放大器晶体管 ■特点 •高击穿电压（击穿=150V） •低集电极输出电容，通常2pF的VCB =12V |