| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 4.7GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 135~270 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 1.3W |
| Description & Applications | NPN EPITAXIAL planar SILICON TRANSISTOR High frequency semi power output stage low noise medium output amplify application FEATURES • High frequency medium output amplification |
| 描述与应用 | NPN平面外延硅晶体管 高频率的半功率输出级 低噪音介质输出放大应用 特点 •高频介质输出放大 |