| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 400mA/0.4A |
| 截止频率fTTranstion Frequency(fT) | 130MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300~600 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 15mV |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | transistor SILICON NPN EPITAXIAL TYPE Audio Frequency General Purpose Amplifier Applications Muting and Switching Applications • Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • High Collector Current: IC = 400 mA (max) |
| 描述与应用 | 晶体管NPN硅外延型 音频通用放大器应用 静音和开关应用 •低集电极饱和电压VCE（SAT）（1） =15毫伏 @ IC=10毫安/ IB= 0.5毫安 •高集电极电流IC= 400 mA（最大） |