| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 5V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 3V |
| 集电极连续输出电流ICCollector Current(IC) | 10mA |
| 截止频率fTTranstion Frequency(fT) | 17GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 70~140 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 30mW |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fT 17 GHz TYP. • High gain |S21e|*2= 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC =7mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC=1mA • 6-pin Small Mini Mold Package |
| 描述与应用 | NPN外延硅晶体管 微波高增益放大 特写 •高FT 17 GHz的TYP。 •高增益 | S21E|* 2 =15.5 dB典型值。 @ F =2 GHz时，VCE= 2 V，IC=7毫安 •NF= 1.1 dB时，F =2 GHz的VCE= 2 V，IC=1MA •6针小型微型模具包装 |