| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
9.0V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
6V |
| 集电极连续输出电流ICCollector Current(IC) |
100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) |
5GHz |
| 直流电流增益hFEDC Current Gain(hFE) |
80~110 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
|
| 耗散功率PcPower Dissipation |
125mW/0.125W |
| Description & Applications |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5195 |
| 描述与应用 |
NPN外延硅晶体管 高频低噪声放大 特写 超超超小型模具薄型扁平封装 （1.4毫米×0.8毫米×0.59毫米：TYP。） •包含同一个芯片2SC5195 |