| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 9.0V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 14.5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 75~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage |
| 描述与应用 | NPN外延硅晶体管 4引脚微型模具 特写 •高增益，低噪声 •小反向传输电容 •可在低电压下运行 |