| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 9.0V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 12Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation features • High transition frequency fT • High gain of 8.2 dB and low noise of 1.8 dB at 3 V • Optimum for RF amplification of a portable telephone and pager • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 | NPN硅外延平面型 对于低电压低噪声高频振荡 特点 •高转换频率fT 在3 V•高增益8.2分贝和1.8分贝的低噪音 优化的便携式电话和寻呼机的RF放大 •S-迷你型包装，使瘦身的设备和 通过自动插入磁带包装和杂志 填料 |