| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 1.1GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 148 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | High Frequency Amplify Application Silicon NPN Epitaxial Type（mini type） description 2SC5477 is a super mini package resin sealed silicon NPN epitaxial type transistor It is designed for hig frequency amplify application feature * super mini package for easy mounting * high gain band widths product application small type machine high frequency amplify application |
| 描述与应用 | 高频放大应用 NPN硅外延型（迷你型） 描述 2SC5477是一个超小型封装树脂密封硅NPN外延型晶体管 它是专为较高频率的应用放大 特点 *易于安装的超小型封装 *高增益带宽产品 应用 小型机高频放大应用 |