| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 3.3V |
| 集电极连续输出电流ICCollector Current(IC) | 12mA |
| 截止频率fTTranstion Frequency(fT) | 25GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~100 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 39mW |
| Description & Applications | NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) |
| 描述与应用 | NPN硅RF晶体管 低噪声，高增益放大 扁平引线4-pin薄型超小型模具 特点 •非常低噪声，高增益放大应用 •NF= 1.1分贝，GA =16 dB。 @ F =2 GHz时，VCE= 2 V，IC= 5毫安 •最大可用功率增益：：MAG =19 dB。 @ F =2 GHz时，VCE= 2 V，IC=20毫安 •fT= 25 GHz技术 •扁平引线4-pin薄型超小型模具（T =0.59毫米） |