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商品参数:

  • 型号:2SC5508
  • 厂家:NEC
  • 批号:05+ 05+nopb
  • 整包数量:3000
  • 最小起批量:10
  • 标记/丝印/代码/打字:T79
  • 封装:SOT-343
  • 技术文档:下载

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)15V
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)3.3V
集电极连续输出电流ICCollector Current(IC)35mA
截止频率fTTranstion Frequency(fT)25GHz
直流电流增益hFEDC Current Gain(hFE)50~100
管压降VCE(sat)Collector-Emitter Saturation Voltage
耗散功率PcPower Dissipation115mW/0.115W
Description & ApplicationsNPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
描述与应用NPN硅RF晶体管 低噪声,高增益放大 扁平引线4-pin薄型超小型模具 特点 •非常低噪声,高增益放大应用 •NF= 1.1分贝,GA =16 dB。 @ F =2 GHz时,VCE= 2 V,IC= 5毫安 •最大可用功率增益::MAG =19 dB。 @ F =2 GHz时,VCE= 2 V,IC=20毫安 •fT= 25 GHz技术 •扁平引线4-pin薄型超小型模具(T =0.59毫米)
规格书PDF 下载

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深圳市爱瑞凯电子科技有限公司
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2SC5508
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