| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 65mA |
| 截止频率fTTranstion Frequency(fT) | 7GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~145 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 140mW/0.14W |
| Description & Applications | NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed (1.0 × 0.5 × 0.5 mm) • NF = 1.4 dB TYP |S21e|*2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz |
| 描述与应用 | NPN硅RF晶体管 高频低噪声 3引脚引线迷你模具 特点 •1005封装（1.0×0.5×0.5毫米） •NF= 1.4 dB| S21E| *2 @ VCE= 3 V，IC= 7毫安=12.0 dB，F=1 GHz的 |