| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 9.0V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 12Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 95~140 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 140mW/0.14W |
| Description & Applications | NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e*2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-pin lead-less minimold package |
| 描述与应用 | NPN硅RF晶体管 高频低噪声 3引脚引线M迷你型 特点 •NF= 1.5 dB。@ VCE= 3 V，IC =3毫安，F =2吉赫 ·S21E*2 =8.5 dB。@ VCE= 3 V，IC=10 mA时，F =2吉赫 •3引脚引线迷你型包装 |