| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 110MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 148 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 1V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type) DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial ty pe transistor. It is designed f or high f requency amplif y application. FEATURE ・High gain band width product ・Super mini package f or easy mounting APPLICATION Small type machine high frequency amplify application |
| 描述与应用 | 高频放大应用 NPN硅外延型（超级迷你型） DESCURIPTION 三菱2SC5626是一个超级迷你装量树脂密封 NPN硅外延，TY PE晶体管。它的设计f或高 f requency功率放大器Ÿ应用。 特写 ·高增益带宽产品 ·超迷你包f或易于安装 应用 小型机高频放大 应用 |