| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 80mA |
| 截止频率fTTranstion Frequency(fT) | 11GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~160 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 800mW/0.8W |
| Description & Applications | Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz |
| 描述与应用 | NPN硅外延 UHF/ VHF宽频带放大器 特点 •高增益带宽积 FT =11 GHz的典型。 •高功率增益和低噪声系数; PG=10分贝典型。 NF=1.2 dB典型值。在f =900 MHz的 |