| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流ICCollector Current(IC) |
150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) |
180MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
270~560 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
<400mV/0.4V |
| 耗散功率PcPower Dissipation |
200mW/0.2W |
| Description & Applications |
General purpose transistor Features 1) Low Cob. Cob=2.0pF (Typ.) Structure Epitaxial planar type NPN silicon transistor |
| 描述与应用 |
通用晶体管 特点 1）低COB。 COB=2.0PF 结构 外延平面型 NPN硅晶体管 |