| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 3.3V |
| 集电极连续输出电流ICCollector Current(IC) | 35mA |
| 截止频率fTTranstion Frequency(fT) | 21GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 115mW/0.115W |
| Description & Applications | NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 21.0 GHz TYP., S21e*2 = 11.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt • 3-pin lead-less minimold package (1005 PKG) |
| 描述与应用 | NPN硅RF晶体管 高频低噪声 扁平引线3引脚超薄型超超迷你 特点 •非常适于3 GHz或更高OSC的应用 •低噪声，高增益 FT =21.0 GHz的TYP。，S21E*2 =11.5 dB。 @ VCE= 2 V，IC=20 mA时，F =2吉赫 NF= 1.1 dB。 @ VCE= 2 V，IC=5毫安，F =2 GHz时，ZS= Zopt •3引脚引线迷你包装（1005封装） |