| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 12Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~170 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 80mW |
| Description & Applications | Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain low noise figure at low power operation: |S21|2= 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) |
| 描述与应用 | NPN硅外延 VHF/ UHF宽频带放大器 特点 •高功率增益低噪声系数在低功耗运行： | S21| 2= 16 dB，NF=1.0 dB（VCE= 1 V，IC= 5毫安，F =900兆赫） |