| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 2A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 400~1000 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <120mV/0.12V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 25 ns (typ.) |
| 描述与应用 | 晶体管的硅NPN外延型 高速开关应用 DC-DC转换器应用 频闪应用 •高直流电流增益：HFE=400至1000（IC= 0.2 A） •低集电极 - 发射极饱和电压VCE（饱和）= 0.12 V（最大值） •高速开关：TF =25 ns |