| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 100V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 400~1000 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <170mV/0.17V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | Silicon NPN Epitaxial Type Transistor High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) • High-speed switching: tf = 85 ns (typ.) |
| 描述与应用 | 硅NPN外延型晶体管 高速开关应用 DC-DC转换器应用 频闪应用 •高直流电流增益：HFE=400〜1000（IC=0.1 A） •低集电极 - 发射极饱和电压VCE（饱和）= 0.17 V（最大值） •高速开关：TF =85 ns |