| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流ICCollector Current(IC) | 1.5A |
| 截止频率fTTranstion Frequency(fT) | 180MHz |
| 直流电流增益hFEDC Current Gain(hFE) | >200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 350mV/0.35V |
| 耗散功率PcPower Dissipation | 3W |
| Description & Applications | Silicon NPN epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 用于DC-DC转换器 ■特点 •低集电极 - 发射极饱和电压VCE（饱和） •迷你型包装，使瘦身的设备和 通过自动插入磁带包装 |