集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 60V |
集电极连续输出电流ICCollector Current(IC) | 125mA/0.125A |
截止频率fTTranstion Frequency(fT) | 200MHz |
直流电流增益hFEDC Current Gain(hFE) | 180~390 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率PcPower Dissipation | 150mW/0.15W |
Description & Applications | For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5814,2SC5815,2SC5816,2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURES ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ●Low collecter to emitter saturation voltage VCE(sat)=0.3V max (@IC=30mA,IB=1.5mA) APPLICATION For hybrid IC , small type machine low frequency voltage amplify application |
描述与应用 | 低频放大应用 硅NPN外延型 说明 2SC5814,2SC5815,2SC5816,2SC5817是一个超级迷你包 NPN硅外延型晶体管。它是专为低频 电压放大应用。 特点 ●促进小型化和高密度安装 ●优良的线性的直流正向电流增益 ●捕集器发射极饱和电压低 VCE(饱和)=0.3V最大(@ IC=30毫安,IB=1.5毫安) 应用 对于混合IC,小型机低频电压放大 应用 |