| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~460 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Silicon NPN epitaxial planar type general amplification ■ Features • High forward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 一般的放大 ■特点 •高正向电流传输比HFE •SSS迷你型封装，允许减小和变薄带包装的设备，通过自动插入 |