| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 300V |
| 集电极连续输出电流ICCollector Current(IC) | 70mA |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 1.2V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | Silicon NPN epitaxial planar type For general amplification ■ Features • High collector-emitter voltage (Base open) VCEO • High transition frequency fT |
| 描述与应用 | NPN硅外延平面型 对于一般的放大 ■特点 •高集电极 - 发射极电压（基本打开）VCEO •高转换频率fT |