| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 1.9GMHz |
| 直流电流增益hFEDC Current Gain(hFE) | 75~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb • SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 对于高频放大/振荡/混合 ■特点 •高转换频率fT •小集电极输出电容（通用基础，输入开路）COB 和反向传输电容（普通基地）CRB •SSS迷你型包装，让小型的设备通过自动插入磁带包装 |