| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 120V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 120~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 140mV/0.14V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications ・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) ・Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) ・High-speed switching: tf = 0.2 μs (typ) |
| 描述与应用 | 晶体管的硅NPN外延型 高速开关应用 DC-DC转换器应用 ·高直流电流增益：HFE=120〜300（IC= 0.1 A） ·低集电极 - 发射极饱和：VCE（饱和）= 0.14 V（最大值） ·高速开关：TF=0.2微秒 |