| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 700mA/0.7A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300~600 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 10mV |
| 耗散功率PcPower Dissipation | 1.5W |
| Description & Applications | Silicon NPN epitaxial planar transistors general purpose AF amplifier Features * very small package enabling compactness and slimness of sets * large current capacity (Ic=0.7A)and low saturation voltage |
| 描述与应用 | NPN硅外延平面型晶体管 通用AF放大器 特点 *非常小的封装，使紧凑和苗条套 *大电流能力和低饱和电压（IC=0.7A） |