| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~270 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | medium power transistor feature * high current.(Ic=5A) *low saturation voltage. typically VCE(sat)=0.1V at Ic/Ib=150mA/15mA |
| 描述与应用 | 中等功率晶体管 特点 *高电流（IC=5A）。 *低饱和电压。通常VCE（饱和）= 0.1V |